
I've found this explanation to the phenomena of leakage:
"... Transistor leakage is the leakage current across the reverse biased collector-base junction. This current then crosses the base-emitter, which, of course, causes a current from collector to emitter equal to the leakage current times the Hfe of the transistor, just as any current from base to emitter does..."
So my first question is:
- Do you find this to be correct?
My second, and most important question is:
- How do we best fake this when using a silicon transistor?
I've tried "piggybacking" trannies.
I've tried connecting large resistors from collector to base, but there's no sign of any leakage, just a dramatic drop of gain.
I've also connected small pF caps between collector and base in order to smooth out the high end, and this actually works, but it doesn't help the "leakage issue"..
Is there anything else one can do?
(Would love to build/bias a SI Tone Bender Mk1, and I know that some people have done this with great result!)